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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 1200V 375A TO-264TubeTO-264 (IXYK)Through HoleXPT™, GenX4™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 340A TO-264TubeTO-264 (IXYK)Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 310A PLUS264TubePLUS264™Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 320A TO-264TubeTO-264 (IXYK)Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 240A TO-264TubeTO-264 (IXYK)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 480A TO-264TubeTO-264 (IXYK)Through HoleXPT™, GenX4™-55°C ~ 175°C (TJ)
IXYSIGBT 900V 310A TO-264TubeTO-264 (IXYK)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 400A TO-264BulkTO-264 (IXYK)Through HoleGen5 XPT™-55°C ~ 175°C (TJ)
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