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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYS650V, 220A, XP Gen5 A5 IGBT in SBulkSOT-227BChassis MountGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 470A SOT-227BTubeSOT-227BChassis MountXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT 1700V 88A SOT-227BTubeSOT-227BChassis MountXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1700V 120A SOT-227BTubeSOT-227BChassis MountXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 650V 150A SOT-227BTubeSOT-227BChassis MountXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT MOD 900V 115A 500W SOT227BTubeSOT-227BChassis MountXPT™, GenX3™-55°C ~ 150°C (TJ)
IXYSIGBT MOD 1200V 105A 500W SOT227BTubeSOT-227BChassis MountXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT MOD 1200V 105A 500W SOT227BTubeSOT-227BChassis MountXPT™, GenX3™-55°C ~ 150°C (TJ)
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