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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() MII145-12A3 $55.48 | IXYS | IGBT MODULE 1200V 160A 700W Y4M5 | Box | Y4-M5 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() MII150-12A4 $100.42 | IXYS | IGBT MOD 1200V 180A 760W Y3DCB | Box | Y3-DCB | Chassis Mount | - | 150°C (TJ) |
![]() MII200-12A4 $123.86 | IXYS | IGBT MOD 1200V 270A 1130W Y3DCB | Box | Y3-DCB | Chassis Mount | - | 150°C (TJ) |
![]() MII300-12A4 $149.38 | IXYS | IGBT MOD 1200V 330A 1380W Y3DCB | Box | Y3-DCB | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() MII400-12E4 $96.50 | IXYS | IGBT MOD 1200V 420A 1700W Y3LI | - | Y3-Li | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() MII75-12A3 $38.82 | IXYS | IGBT MODULE 1200V 90A 370W Y4M5 | Box | Y4-M5 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() MIO1200-25E10 $1,123.89 | IXYS | IGBT MODULE 2500V 1200A E10 | Box | E10 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
| IXYS | IGBT MODULE 3300V 1200A E10 | Box | E10 | Chassis Mount | - | -40°C ~ 125°C (TJ) |

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