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1N3213R is listed in the Single Diodes range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE STANDARD REV 500V 15A DO5. Review the specifications below when checking this part for your BOM.
The GeneSiC Semiconductor 1N3213R is a silicon standard recovery diode housed in a DO-5 (DO-203AB) stud mount package. It features a maximum repetitive peak reverse voltage of 400 V and a continuous forward current rating of 15 A at Tc = 25 °C. The device supports an operating junction temperature range from -55 °C to +150 °C. Electrical characteristics include a maximum forward voltage of 0.65 V at IF = 15 A and Tj = 25 °C, with a surge non-repetitive forward current capability of 297 A.
Verify the specific part number suffix against official datasheets to confirm terminal orientation. The 'R' designation indicates reversed leads where the stud functions as the anode. Confirm thermal management requirements align with the specified junction-to-case thermal resistance limits during installation.
Select this component when a high-current standard recovery diode is required for stud-mount applications. Ensure the system's peak inverse voltage does not exceed the 400 V rating. Verify that the mounting surface allows for adequate heat dissipation to maintain the junction temperature within the specified operational range under continuous load conditions.
This component belongs to the 1N3212 through 1N3214R series of silicon standard recovery diodes manufactured by GeneSiC Semiconductor. The series shares identical physical dimensions and electrical ratings for forward current and surge capacity, differentiated primarily by their maximum repetitive peak reverse voltage ratings ranging from 400 V to 600 V.
Direct substitutes within the same series include the 1N3212R and 1N3214R, provided the circuit voltage requirements match the specific reverse voltage rating of the replacement unit.
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