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Product Detailed Parameters
- Description:DIODE STD 80V 125MA X1DFN10062
- Series:-
- Mfr:Diodes Incorporated
- Package:Tape & Reel (TR),Cut Tape (CT)
- Technology:Standard
- Voltage - DC Reverse (Vr) (Max):80 V
- Current - Average Rectified (Io):125mA
- Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
- Speed:Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):4 ns
- Current - Reverse Leakage @ Vr:100 nA @ 80 V
- Capacitance @ Vr, F:3pF @ 0.5V, 1MHz
- Mounting Type:Surface Mount
- Package / Case:0402 (1006 Metric)
- Supplier Device Package:X1-DFN1006-2
- Operating Temperature - Junction:-65°C ~ 150°C
- Grade:-
- Qualification:-
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Overview
The 1N4448HLP-7 is a surface mount fast switching diode manufactured by Diodes Incorporated. It features an X1-DFN1006-2 case with a peak repetitive reverse voltage of 80 V and an average rectified output current of 95 mA. The device exhibits a maximum reverse recovery time of 4.0 ns and a total capacitance of 3.0 pF at 0.5 V reverse bias. Forward voltage ranges from 0.62 V to 1.25 V depending on the forward current level. It operates within a junction temperature range of -65°C to +150°C.
Feature Summary
- Fast switching speed suitable for high-frequency applications
- Ultra-small surface mount package design
- Low reverse leakage current characteristics
- Qualified to AEC-Q101 standards for high reliability
Applications
- Battery powered portable applications
- High frequency switching circuits
- General purpose signal processing
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity, as the -7 suffix indicates tape and reel packaging. Confirm compliance requirements such as RoHS and halogen-free status against project specifications. Ensure the X1-DFN1006-2 footprint matches the PCB layout guidelines provided in the datasheet. Check for any recent product change notices that may affect marking or material composition.
Selection Notes
Select this component when a compact surface mount solution with fast switching capabilities is required. The low reverse leakage and small package size make it suitable for space-constrained portable devices. Consider the thermal resistance and power dissipation limits when designing for high ambient temperatures. Verify that the 80 V reverse voltage rating meets the circuit's peak reverse voltage requirements.
Part Context
This part belongs to the 1N4448 series of fast switching diodes produced by Diodes Incorporated. It utilizes the X1-DFN1006-2 package, which is significantly smaller than traditional leaded packages like DO-35. The device is designed to replace larger discrete diodes in modern surface mount assembly processes while maintaining similar electrical performance characteristics.
Replacement Considerations
Check for direct substitutes from other manufacturers offering the same X1-DFN1006-2 package and 80 V rating. Verify pinout compatibility and thermal characteristics before substitution. Ensure that any replacement part meets the AEC-Q101 qualification if automotive reliability is required.
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