1N4448TR

Overview

The onsemi 1N4448TR is a small signal switching diode housed in a DO-204AH (DO-35) axial lead package. It features a maximum repetitive reverse voltage of 100 V and an average rectified forward current of 200 mA. The device exhibits a reverse recovery time of 4.0 ns, with a total capacitance of 2.0 pF at 0 V reverse bias. Operating junction temperatures range from -55°C to +175°C, while storage temperatures extend from -65°C to +200°C.

Feature Summary

• Fast switching capability with a 4.0 ns reverse recovery time
• High breakdown voltage rating up to 100 V
• Hermetically sealed glass construction for corrosion resistance

Applications

• General purpose switching circuits
• High-speed logic interface protection
• Clamping and flyback diode applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packing method and marking details. Confirm RoHS compliance status through manufacturer declarations prior to integration. Ensure component authenticity by sourcing directly from authorized distributors or verified supply channels.

Selection Notes

Select this component for applications requiring fast switching speeds within a standard axial lead form factor. Consider thermal derating curves when designing for high ambient temperatures. Verify that the 200 mA average current rating meets the continuous load requirements of the target circuit design.

Part Context

This part belongs to the 1N91x and 1N4x48 series of small signal diodes manufactured by onsemi. It shares electrical characteristics with other variants in the family but differs in packaging and marking conventions. The TR suffix indicates tape and reel packaging suitable for automated assembly processes.

Replacement Considerations

Substitutes include 1N4148TR and FDLL4448. Verify pinout compatibility and ensure replacement parts meet the same voltage and current ratings.