2DD2661-13

Single Bipolar Transistors Overview

The 2DD2661-13 is a silicon NPN single bipolar junction transistor (BJT) manufactured by Diodes Incorporated. It is housed in an SOT-89-3 surface-mount package designed for low saturation voltage applications. The device supports a maximum DC collector current of 4 A and operates with a collector-emitter voltage of 12 V. Key electrical characteristics include a collector-base voltage of 15 V, an emitter-base voltage of 6 V, and a collector-emitter saturation voltage of 180 mV. It features a power dissipation rating of 2 W, a gain-bandwidth product of 170 MHz, and a minimum DC current gain of 270 at 200 mA. The component functions within a temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Low saturation voltage design for efficient switching performance
• High DC current gain capability for signal amplification
• Robust thermal operation across extended industrial temperature ranges

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Low-voltage amplifier stages
• Power management control interfaces

Single Bipolar Transistors Procurement Notes

Verify the End-of-Life status before integration, as this component is marked for obsolescence by the manufacturer. Confirm that alternative sourcing channels are established if long-term supply continuity is required for production. Ensure that the specific SOT-89-3 footprint matches the target PCB layout constraints. Validate RoHS compliance documentation against current regulatory requirements for the intended market. Review the official datasheet for any updates regarding handling or storage sensitivity prior to procurement.

Single Bipolar Transistors Selection Notes

Select this component when a low-saturation NPN transistor is required for high-current switching applications. The SOT-89-3 package offers a compact solution for space-constrained designs. Consider the 12 V collector-emitter rating to ensure adequate headroom for the specific circuit voltage levels. Evaluate the 170 MHz transition frequency to confirm suitability for the intended operating bandwidth. Compare the 2 W power dissipation capability against the thermal management capabilities of the final assembly.

Single Bipolar Transistors Part Context

This part belongs to the 2DD2 series from Diodes Incorporated, which focuses on low saturation voltage transistors. The series utilizes silicon technology optimized for surface-mount assembly. The 2DD2661-13 variant specifically targets applications requiring efficient power handling in a small form factor. It shares common packaging standards with other members of the family while differing in specific voltage and current ratings.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. Due to the End-of-Life status, direct pin-compatible alternatives should be identified through official manufacturer cross-reference tools. Verify that any replacement maintains the SOT-89-3 package and meets the original electrical specifications.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the 2DD2661-13?

The maximum collector-emitter voltage (VCEO) is 12 V.

Does the 2DD2661-13 support surface-mount technology?

Yes, it is designed for SMD/SMT installation in an SOT-89-3 package.

What is the minimum DC current gain specified for this transistor?

The minimum DC current gain (hFE) is 270, measured at 200 mA and 2 V.