2EDS8265HXUMA2

Gate Driver Overview

The Infineon Technologies 2EDS8265HXUMA2 is a dual-channel, reinforced isolated MOSFET gate driver designed for half-bridge configurations. It features galvanic isolation with an industrial voltage class of 650 V and a common mode rejection immunity (CMTI) of 150 V/ns. The device provides two outputs with source currents of 4 A and sink currents of 8 A. Operating supply voltage ranges from 3 V to 3.5 V on the input side, while output voltages span 4.5 V to 20 V. Propagation delays are limited to 37 ns maximum, with rise and fall times of 6.5 ns and 4.5 ns respectively. It operates within a temperature range of -40°C to +125°C in a WB-DSO-16 package.

Gate Driver Feature Summary

• Reinforced galvanic isolation supporting high-voltage applications up to 650 V
• High common-mode transient immunity of 150 V/ns for robust signal integrity
• Asymmetric output drive capability with 4 A source and 8 A sink currents
• Integrated shutdown function for precise control of switching states

Gate Driver Applications

• Switched-mode power supplies (SMPS)
• High-power industrial systems
• Phase-shift full bridge converters

Gate Driver Procurement Notes

Verify component authenticity through authorized channels due to the NRND status. Confirm that the DSO-16 package matches PCB footprint requirements. Ensure isolation ratings meet system safety standards. Check for moisture sensitivity handling procedures during storage and reflow. Validate that the 650 V insulation class aligns with electrical clearance needs.

Gate Driver Selection Notes

Select this driver for applications requiring reinforced isolation and high CMTI. Consider the asymmetric current drive when sizing external components. Verify compatibility with CMOS or TTL logic inputs. Ensure the operating temperature range suits the environmental conditions. Evaluate the 37 ns propagation delay against timing constraints in the target circuit design.

Gate Driver Part Context

This component belongs to Infineon's EiceDRIVER family of isolated gate drivers. It is specifically engineered for high-performance power conversion topologies. The part integrates advanced protection features and fast switching capabilities. It supports both high-side and low-side configurations in half-bridge setups. The series emphasizes reliability in demanding industrial environments.

Gate Driver Replacement Considerations

Public confirmed substitute part numbers: None identified.