Single Bipolar Transistors 2N2369AUBC product image

2N2369AUBC

$25.41
  • Description:SMALL-SIGNAL BJT
  • Series:-

SKU:2a886c3e7c0d Category: Brand:

  
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2N2369AUBC is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is SMALL-SIGNAL BJT. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N2369AUBC

  • Description:SMALL-SIGNAL BJT
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):15 V
  • Vce Saturation (Max) @ Ib, Ic:450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 100mA, 1V
  • Power - Max:360 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UBC
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N2369AUBC

2N2369AUBC

Single Bipolar Transistors Overview

The Microchip Technology 2N2369AUBC is a single NPN silicon small-signal bipolar junction transistor (BJT) designed for through-hole mounting in a TO-18 metal can package. It features a maximum collector-emitter voltage of 15 V and a continuous collector current rating of 100 mA, with a power dissipation capacity of 360 mW. The device supports an extended operating temperature range from -65 °C to +200 °C junction temperature. Key electrical characteristics include a collector-base breakdown voltage of 40 V and an emitter-base breakdown voltage of 4.5 V.

Single Bipolar Transistors Feature Summary

  • High-speed switching capability optimized for saturated operation
  • Robust thermal performance supporting high junction temperatures up to 200 °C
  • Metal can construction providing environmental durability

Single Bipolar Transistors Applications

  • High-speed saturated switching circuits
  • Low power signal processing applications
  • Military and aerospace electronic systems requiring ruggedized components

Single Bipolar Transistors Procurement Notes

Verify the specific suffix configuration against official datasheets to ensure compatibility with required screening levels or radiation hardness standards. Confirm that the TO-18 package dimensions match the target PCB footprint. Check for RoHS compliance status as standard versions may not meet modern environmental directives. Validate supplier authenticity through authorized distribution channels to prevent counterfeit components.

Single Bipolar Transistors Selection Notes

Select this component when a hermetically sealed metal package is required for harsh environments. Compare the 15 V collector-emitter voltage limit against circuit supply rails to ensure adequate headroom. Evaluate the 360 mW power dissipation constraint under expected load conditions. Consider the through-hole mounting style if surface mount alternatives are unsuitable for mechanical stability requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2N2369 family of NPN silicon transistors manufactured by Microchip Technology. It shares core electrical specifications with variants such as the JANSM2N2369AUBC and MSR2N2369AUBC, which differ primarily in screening levels and packaging configurations. The standard 2N2369A designation typically refers to the commercial grade version housed in the TO-18 metal can.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.

2N2369AUBC2N2369AUBC
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