2N3117 PBFREE

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N3117 PBFREE is an NPN silicon transistor designed for general-purpose amplifier applications. It features a TO-18 metal can package with lead codes identifying the emitter, base, and collector. The device supports continuous collector currents up to 50 mA and power dissipation of 360 mW at 25°C. Voltage ratings include 60 V for both collector-base and collector-emitter configurations, with an emitter-base voltage limit of 6.0 V. Operating junction temperatures range from -65°C to +200°C.

Single Bipolar Transistors Feature Summary

• Designed for general-purpose amplifier applications using NPN silicon technology
• Utilizes a durable TO-18 metal case construction
• Supports high operating junction temperatures up to +200°C

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Low-frequency signal processing
• Electronic switching applications

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the required plating specification. The PBFREE designation indicates lead-free plating, while TIN/LEAD indicates tin-lead plating. Confirm the TO-18 mechanical outline and lead configuration align with the target PCB footprint. Ensure thermal management strategies accommodate the specified 360 mW power dissipation rating under intended operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when a robust metal-can NPN transistor is required for amplifier stages. The TO-18 package offers superior thermal performance compared to plastic alternatives. Verify that the 50 mA collector current and 60 V voltage ratings exceed circuit requirements. Consider the high maximum junction temperature capability for environments requiring extended thermal stability.

Single Bipolar Transistors Part Context

This component belongs to the standard NPN silicon transistor family manufactured by Central Semiconductor Corp. It utilizes the legacy TO-18 metal can package, which provides hermetic sealing and reliable performance in demanding environments. The device serves as a discrete semiconductor solution for analog signal amplification and control tasks within electronic systems.

Single Bipolar Transistors Replacement Considerations

Consult official datasheets for cross-reference compatibility. Verify pinout alignment between the emitter, base, and collector leads. Ensure replacement devices match the TO-18 mechanical dimensions and electrical characteristics.