Single Bipolar Transistors 2N3439UA/TR product image

2N3439UA/TR

$39.07
  • Description:TRANS NPN 350V 1A
  • Series:-

SKU:62e95efaedae Category: Brand:

  
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2N3439UA/TR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 350V 1A. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N3439UA/TR

  • Description:TRANS NPN 350V 1A
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):350 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max):2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 20mA, 10V
  • Power - Max:800 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N3439UA/TR

2N3439UA/TR

Single Bipolar Transistors Overview

The 2N3439UA/TR is a single NPN silicon power bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a collector-emitter breakdown voltage of 350V and a maximum continuous collector current of 1A. The device is designed for surface-mount applications in the UA package, offering a maximum power dissipation of 800mW. It operates within a temperature range of -65°C to +200°C junction temperature. This component is part of the high-voltage BJT series intended for robust switching and amplification tasks.

Single Bipolar Transistors Feature Summary

  • High voltage capability with 350V collector-emitter breakdown rating
  • Extended operating temperature range up to 200°C junction temperature
  • Surface-mount construction in a compact UA package

Single Bipolar Transistors Applications

  • High-voltage switching circuits
  • Power amplification stages
  • Industrial control systems requiring wide thermal tolerance

Single Bipolar Transistors Procurement Notes

Verify the specific suffix configuration against official Microchip documentation to ensure compatibility with required packaging and testing standards. Confirm RoHS compliance status as indicated in the datasheet, noting that certain variants may not meet standard environmental directives. Cross-reference the manufacturer part number with authorized distributor listings to validate authenticity and traceability before procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage isolation and moderate current handling in a small form factor. Ensure the thermal management strategy supports the 800mW dissipation limit at elevated ambient temperatures. Compare performance metrics against alternative high-voltage BJTs if lower voltage ratings or different package types are acceptable for the specific application constraints.

Single Bipolar Transistors Part Context

This transistor belongs to Microchip's lineup of high-voltage bipolar junction transistors. It shares functional similarities with other devices in the 2N3439 series but differs in packaging and specific electrical tolerances. The UA package variant is optimized for automated surface-mount assembly processes, distinguishing it from through-hole alternatives like the P suffix versions found in related product families.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers for this specific model were not identified in available documentation.

2N3439UA/TR2N3439UA/TR
$39.07
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