2N3750

Single Bipolar Transistors Overview

The Microchip Technology 2N3750 is a silicon NPN power bipolar junction transistor (BJT) designed for high-current applications. It features a maximum collector current of 5A and a collector-emitter breakdown voltage of 40V. The device utilizes a metal TO-111/I package with four pins, providing an isolated case connection suitable for stud mounting. It supports a maximum power dissipation of 30W and operates within a temperature range up to 175°C.

Single Bipolar Transistors Feature Summary

• High current handling capability with a 5A continuous collector current rating
• Robust thermal management through a metal TO-111/I package supporting stud mounting
• Electrical isolation provided by the isolated case connection design

Single Bipolar Transistors Applications

• Power switching circuits requiring high current capacity
• Amplifier stages in audio or RF power applications
• Industrial control systems utilizing stud-mounted transistors

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as Solitron Devices Inc also produces this part number. Confirm RoHS compliance status, as the Solitron variant is listed as non-compliant. Ensure the TO-111/I package and pin configuration match the target circuit board layout requirements before procurement.

Single Bipolar Transistors Selection Notes

Select this component when a high-power NPN BJT with a 5A current rating is required. The TO-111/I metal package necessitates specific mechanical mounting provisions for heat sinking. Compare against alternative manufacturers to ensure compatibility with existing supply chains and regulatory standards.

Single Bipolar Transistors Part Context

This component belongs to the class of power bipolar junction transistors manufactured by Microchip Technology and other semiconductor vendors. It serves as a discrete active element for controlling large electrical currents in electronic circuits, distinct from integrated logic or low-power signal transistors.

Single Bipolar Transistors Replacement Considerations

Cross-reference with equivalent NPN power BJTs featuring a 5A current rating and 40V V(BR)CEO. Verify that replacement devices support the TO-111/I metal package and stud-mounting configuration to maintain mechanical and thermal interface compatibility.