2N3799 PBFREE

$1.23

Description：60V 50MA 360MW TH TRANSISTOR-SMA
Series：-

SKU:827e3f7494fa Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

2N3799 PBFREE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 60V 50MA 360MW TH TRANSISTOR-SMA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N3799 PBFREE

Description：60V 50MA 360MW TH TRANSISTOR-SMA
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：PNP
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)：10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：300 @ 1mA, 5V
Power - Max：360 mW
Frequency - Transition：30MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-206AA, TO-18-3 Metal Can
Supplier Device Package：TO-18
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N3799 PBFREE

2N3799 PBFREE

Single Bipolar Transistors Overview

The Central Semiconductor 2N3799 PBFREE is a silicon PNP bipolar junction transistor designed for low noise amplification applications. It utilizes a TO-18-3 through-hole metal can package and operates with a maximum DC collector current of 50 mA. The device supports a collector-emitter voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. Key electrical characteristics include a power dissipation rating of 360 mW, a transition frequency (fT) of 80 MHz, and a collector-emitter saturation voltage of 250 mV. The component functions within a temperature range of -65°C to +200°C.

Single Bipolar Transistors Feature Summary

Designed specifically for low noise amplification circuits
Utilizes a hermetically sealed TO-18-3 metal can package for robustness
Capable of operation at elevated temperatures up to +200°C

Single Bipolar Transistors Applications

Low noise amplifier stages
General purpose switching circuits
Audio signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet version from Central Semiconductor or authorized distributors to confirm RoHS compliance status and exact pinout configurations. Ensure that the procurement channel provides original manufacturer documentation to validate the part number authenticity and technical specifications against the official product sheet.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high gain and low noise characteristics is required in a through-hole metal package. Consider the 60 V voltage limits and 50 mA current capacity during circuit design. Verify thermal management requirements given the 360 mW power dissipation limit and the specific operating temperature range constraints.

Single Bipolar Transistors Part Context

This component belongs to the 2N37 series of bipolar transistors manufactured by Central Semiconductor. It serves as a discrete semiconductor device suitable for analog and digital applications requiring reliable performance in standard through-hole mounting environments.