Single Bipolar Transistors 2N4401 TRE PBFREE product image

2N4401 TRE PBFREE

$0.14
  • Description:40V 600MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:bca7d042e4fb Category: Brand:

  
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2N4401 TRE PBFREE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 40V 600MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N4401 TRE PBFREE

  • Description:40V 600MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N4401 TRE PBFREE

2N4401 TRE PBFREE

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N4401 TRE PBFREE is an NPN epitaxial silicon general-purpose transistor housed in a TO-92-3 through-hole package. It supports a maximum collector current of 600 mA and a collector-emitter voltage of 40 V, with a collector-base voltage rating of 60 V. The device features a power dissipation capacity of 625 mW and a transition frequency of 250 MHz. DC current gain (hFE) ranges from 100 to 300 at 150 mA and 1 V. It operates within a junction temperature range of -65°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Utilizes epitaxial silicon construction for reliable general-purpose amplification and switching.
  • Provides high DC current gain suitable for low-level signal processing applications.
  • Features a standard TO-92-3 leaded package designed for through-hole mounting.

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Switching applications
  • Low-level signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TRE' against official datasheets to confirm tape-and-reel packaging details. Ensure RoHS compliance status matches project requirements. Confirm pinout orientation corresponds to the TO-92-3 standard configuration. Validate operating temperature limits against environmental conditions.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a standard NPN bipolar junction transistor with moderate current handling capabilities. The TO-92-3 package facilitates easy integration into through-hole PCB layouts. Consider the 625 mW power dissipation limit when designing thermal management strategies for continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the widely recognized 2N4401 family of NPN transistors. It serves as a direct functional equivalent to other manufacturers' 2N4401 variants. The device is commonly used in consumer electronics and industrial control systems where general-purpose switching is required.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include 2N4401BU (onsemi), 2N4401TAR (onsemi), and 2N4401_D11Z (Fairchild). Verify that replacement packages match the TO-92-3 form factor and that electrical parameters meet or exceed original specifications.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 40 V.

What is the transition frequency of this transistor?

The transition frequency (fT) is specified as 250 MHz.

Is this component RoHS compliant?

Yes, the 'PBFREE' designation indicates it is lead-free and RoHS compliant.

2N4401 TRE PBFREE2N4401 TRE PBFREE
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