2N4416A-2

$31.88

Description：JFET N-CH 35V TO206AF
Series：-

SKU:34bcf8be010b Category: JFETs Brand: Vishay Siliconix

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Product introduction

2N4416A-2 is listed in the Jfets range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is JFET N-CH 35V TO206AF. Review the specifications below when checking this part for your BOM.

Jfets specifications for 2N4416A-2

Description：JFET N-CH 35V TO206AF
Series：-
Mfr：Vishay Siliconix
Package：Bulk
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：35 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：2.5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds：4pF @ 15V
Resistance - RDS(On)：-
Power - Max：300 mW
Operating Temperature：-50°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-206AF, TO-72-4 Metal Can
Supplier Device Package：TO-206AF (TO-72)
Grade：-
Qualification：-

Jfets datasheet and documents for 2N4416A-2

2N4416A-2

Jfets Overview

The Vishay Siliconix 2N4416A-2 is an N-channel Junction Field-Effect Transistor (JFET) designed for high-frequency amplification and low-noise applications. It features a Gate-Source Breakdown Voltage of -35 V, a Gate-Source Cutoff Voltage range from -2.5 V to -6 V, and a minimum Forward Transconductance of 4.5 mS. The device provides a typical Power Gain of 13 dB at 400 MHz with a Noise Figure of 3 dB. It operates within a junction temperature range of -55 °C to 150 °C.

Jfets Feature Summary

Hermetically sealed TO-206AF (TO-72) package suitable for military processing
Very low noise performance optimized for sensitive signal paths
High-frequency gain capability up to 400 MHz
Low distortion characteristics for high-quality amplification

Jfets Applications

VHF amplifiers
Mixers
Oscillators
Sample-and-hold circuits

Jfets Procurement Notes

Verify the specific suffix '-2' against official datasheets to confirm it denotes the standard TO-206AF metal can package variant. Confirm RoHS compliance status as historical documentation may vary. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to avoid counterfeit components in this legacy part number.

Jfets Selection Notes

Select the 2N4416A-2 when a higher Gate-Source Breakdown Voltage (-35 V) compared to the standard 2N4416 is required. This model is appropriate for designs needing a wider Gate-Source Cutoff Voltage range (-2.5 V to -6 V). It serves as a direct replacement for other n-channel JFETs requiring hermetic sealing and high-frequency stability in RF environments.

Jfets Part Context

This component belongs to the 2N4416 family of N-channel JFETs manufactured by Vishay Siliconix. The 'A' designation indicates enhanced breakdown voltage specifications over the base model. The '-2' suffix typically identifies the specific lead frame and package configuration available in the TO-206AF metal can format.

Jfets Replacement Considerations

The 2N4416 is a compatible alternative but offers a lower Gate-Source Breakdown Voltage of -30 V. Designers must verify that the reduced breakdown rating meets the circuit requirements before substituting.