2N4938

Bipolar Transistor Arrays Overview

The Central Semiconductor Corp 2N4938 is a silicon planar epitaxial NPN power transistor designed for high-voltage switching and amplification applications. It features a hermetically sealed TO-5 metal can package, providing robust environmental protection and thermal stability. The device is characterized by a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 1A. With a maximum power dissipation of 1W at 25°C ambient temperature, it supports operation across an extended junction temperature range from -65°C to +200°C. These specifications make the component suitable for demanding industrial and aerospace environments requiring reliable high-voltage performance.

Bipolar Transistor Arrays Feature Summary

• High voltage capability with 600V collector-emitter breakdown voltage
• Hermetically sealed TO-5 metal can package for environmental durability
• Extended operating junction temperature range up to 200°C

Bipolar Transistor Arrays Applications

• High-voltage switching circuits in industrial control systems
• Linear amplifier stages requiring high voltage headroom
• Aerospace and military electronic equipment

Bipolar Transistor Arrays Procurement Notes

Verify the manufacturer designation on the component marking to confirm Central Semiconductor Corp origin. Ensure the TO-5 package dimensions match the target PCB footprint or socket requirements. Confirm that the required voltage and current ratings align with the specific circuit design parameters before integration.

Bipolar Transistor Arrays Selection Notes

Select this component when a high-voltage NPN transistor with a hermetically sealed metal package is required. Consider the 600V breakdown voltage and 1A current limit against the load requirements. Evaluate the thermal management needs given the 1W power dissipation limit and the TO-5 package's thermal characteristics.

Bipolar Transistor Arrays Part Context

The 2N4938 belongs to the family of high-voltage silicon NPN transistors housed in the standard TO-5 metal can package. This form factor is commonly used in applications where reliability under harsh conditions is critical. The device serves as a discrete solution for high-voltage switching and amplification tasks in specialized electronics.

Bipolar Transistor Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter equivalence if considering alternative manufacturers' equivalents.