2N5153L

Single Bipolar Transistors Overview

The Microchip Technology 2N5153L is a radiation-hardened PNP silicon power transistor designed for high-reliability applications. It features a maximum collector current of 2 A and a collector-emitter breakdown voltage of 80 V. The device utilizes a TO-39 metal case package with three terminals. It is qualified to MIL-PRF-19500/545 standards, offering a total ionizing dose radiation hardness level of 50K rads (Si). The component operates within a junction temperature range of -65°C to +200°C.

Single Bipolar Transistors Feature Summary

• Radiation hardened to withstand 50K rads (Si) total ionizing dose
• Qualified per MIL-PRF-19500/545 military specifications
• High thermal stability with operation up to 200°C junction temperature

Single Bipolar Transistors Applications

• Military aerospace systems requiring radiation tolerance
• Satellite communication circuits
• High-reliability switching applications in harsh environments

Single Bipolar Transistors Procurement Notes

Verify the specific radiation qualification level matches project requirements, as the 'L' suffix denotes 50K rads (Si). Confirm compliance with MIL-PRF-19500/545 standards during procurement. Ensure the TO-39 package dimensions align with existing board layouts. Check for RoHS status if required by specific program constraints.

Single Bipolar Transistors Selection Notes

Select this component when radiation hardness is critical for system longevity in space or high-altitude environments. The 2A current rating suits moderate power switching tasks. Compare against JANSL2N5151 if lower radiation tolerance is acceptable. Verify that the PNP configuration fits the circuit topology requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2N515x family of radiation-hardened PNP transistors manufactured by Microchip Technology. It shares mechanical similarities with standard 2N5153 devices but includes enhanced processing for radiation resistance. The family includes variants with different radiation levels, such as JANSM and JANSD.

Single Bipolar Transistors Replacement Considerations

JANSL2N5151 offers equivalent electrical characteristics with identical radiation hardness levels. Standard 2N5153 devices lack radiation hardening and are unsuitable for high-radiation environments.