2N5154

Single Bipolar Transistors Overview

The Microchip Technology 2N5154 is a silicon NPN power bipolar junction transistor (BJT) designed for through-hole mounting in the TO-39 metal can package. It features a maximum collector current of 2 A and a collector-emitter breakdown voltage of 80 V, with a collector-base voltage rating of 100 V. The device supports a power dissipation of 1 W and operates within a temperature range of -65°C to +200°C. Key electrical characteristics include a minimum DC current gain of 70 at 2.5 A and 5 VDC, and a collector-emitter saturation voltage of up to 750 mV.

Single Bipolar Transistors Feature Summary

• High thermal stability enabling operation up to 200°C junction temperature
• Robust power handling capability suitable for high-current switching applications
• Military-grade radiation hardness assurance available in qualified variants

Single Bipolar Transistors Applications

• High-reliability military and aerospace power switching circuits
• Radiation-hardened amplifier stages
• Industrial power regulation systems requiring extended temperature tolerance

Single Bipolar Transistors Procurement Notes

Verify specific ordering suffixes to confirm radiation hardness assurance levels and package variations. Confirm RoHS compliance status as standard versions may not meet environmental directives. Check for recent product change notifications regarding assembly sites or labeling updates before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current capacity and extreme temperature resilience in a hermetically sealed metal package. Ensure circuit design accommodates the specified saturation voltage and power dissipation limits. Consider radiation-hardened variants if the application involves space or high-radiation environments.

Single Bipolar Transistors Part Context

This part belongs to the 2N515x family of power transistors, which includes complementary PNP devices like the 2N5153. The series is characterized by its use in ruggedized electronics where reliability under harsh conditions is critical. The TO-39 package provides superior thermal performance compared to plastic alternatives.

Single Bipolar Transistors Replacement Considerations

Qualified radiation-hardened equivalents include JANSM2N5154U3. Verify pinout compatibility and electrical parameter overlaps when substituting with other NPN power BJTs in the TO-39 package.