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2N6403 is listed in the Scrs range at ChipApex. The manufacturer field lists onsemi. Its product description is THYRISTOR SCR 16A 400V TO220AB. Review the specifications below when checking this part for your BOM.
The onsemi 2N6403 is a reverse blocking thyristor (Silicon Controlled Rectifier) from the 2N6400 Series, designed for half-wave AC control applications. It features glass passivated junctions with center gate geometry for parameter stability and rugged Thermowatt construction. The device offers a peak repetitive off-state voltage of 400 V, an RMS on-state current of 16 A, and an average on-state current of 10 A at a case temperature of 100°C. It operates within a junction temperature range of -40°C to +125°C and utilizes a TO-220AB package.
Verify the specific ordering suffix when purchasing. The 'G' suffix indicates a lead-free package compliant with RoHS standards. Confirm the shipping configuration, as standard bulk packaging differs from rail packaging options available for certain variants in this series.
Select the 2N6403 variant specifically when a 400 V blocking voltage rating is required. Ensure the application circuit accommodates the specified holding current and gate trigger parameters. Verify that the thermal management design maintains the case temperature within limits to support the rated 16 A RMS current.
This component belongs to the 2N6400 Series of Silicon Controlled Rectifiers manufactured by onsemi. The series includes devices with blocking voltages ranging from 50 V to 800 V, sharing common physical construction and electrical characteristics while differing primarily in their voltage ratings.
Cross-reference with other 2N640xG series parts if different voltage ratings are needed. Verify pinout compatibility for the TO-220AB package before substitution.
The peak non-repetitive surge current (ITSM) is 160 A for a 1/2 cycle sine wave at 60 Hz with an initial junction temperature of 25°C.
The maximum thermal resistance from junction to case (RθJC) is 1.5 °C/W.
The typical gate trigger current (IGT) increases as the junction temperature decreases, ranging from approximately 9 mA at 25°C to 60 mA at -40°C under continuous DC conditions.
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