2SB1308-P-TP

Single Bipolar Transistors Overview

The MCC 2SB1308-P-TP is a PNP plastic-encapsulated power transistor housed in an SOT-89 package. It features a collector-emitter voltage (VCEO) of -20 V and a collector-base voltage (VCBO) of -30 V. The device supports a continuous collector current (ICM) of -3 A with a power dissipation (PCM) of 0.5 W at 25°C ambient temperature. DC current gain (hFE) ranges from 82 to 390 depending on the rank, and the transition frequency (fT) is 50 MHz. Operating and storage junction temperatures span from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High collector current capability of -3 A for power switching applications
• Integrated thermal performance with 0.5 W power dissipation rating
• Wide operating temperature range suitable for demanding environments

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• Low-voltage amplifier stages
• Driver circuits requiring high current handling

Single Bipolar Transistors Procurement Notes

Verify the specific suffix configuration when ordering. The "-P" designation indicates RoHS compliance, while the "-TP" suffix specifies tape and reel packaging containing 1000 pieces per reel. Confirm availability through authorized distributors to ensure genuine parts with full traceability and adherence to MCC quality standards.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring a PNP transistor with a -3 A current capacity and -20 V breakdown voltage. Ensure the required hFE rank aligns with circuit gain specifications. Verify that the SOT-89 package dimensions fit the PCB layout constraints and that the thermal management strategy supports the 0.5 W dissipation limit.

Single Bipolar Transistors Part Context

This part belongs to the Micro Commercial Components discrete transistor portfolio, specifically designed as a general-purpose power device. The 2SB1308 series utilizes a plastic encapsulation technology optimized for surface-mount assembly. It serves as a robust solution for medium-power electronic designs where reliable switching and amplification are required within standard industrial temperature ranges.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other PNP transistors in the SOT-89 package offering similar -3 A current ratings and -20 V VCEO specifications. Verify pinout compatibility and thermal resistance characteristics before substitution.