2SB1316TL

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SB1316TL is a PNP power transistor featuring a Darlington connection housed in a CPT3 (TO-252-3) surface-mount package. It provides a collector-emitter breakdown voltage of -100 V and a continuous collector current rating of -2 A. The device achieves a minimum DC current gain (hFE) of 1000 at IC = -1 A and VCE = -2 V, with a maximum saturation voltage of -1.5 V under specified conditions. Thermal management allows for 1 W dissipation at ambient temperature or 10 W when mounted on a ceramic board.

Single Bipolar Transistors Feature Summary

• Integrates a built-in resistor between the base and emitter terminals to simplify drive circuitry.
• Includes an internal damper diode to protect against reverse voltage transients.
• Utilizes a Darlington configuration to deliver high DC current gain for efficient switching.

Single Bipolar Transistors Applications

• High-gain amplification stages requiring minimal base drive current.
• Switching applications within power supply circuits.
• Driver circuits for loads requiring moderate current handling capabilities.

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status prior to integration. Ensure thermal design accounts for the specific mounting conditions affecting power dissipation ratings. Review datasheet specifications for absolute maximum ratings to prevent device failure during operation.

Single Bipolar Transistors Selection Notes

Select this component for designs necessitating high current gain in a compact surface-mount form factor. Consider the integrated base-emitter resistor for simplified biasing networks. Evaluate thermal requirements based on the chosen PCB copper area, as power dissipation varies significantly between ambient and board-mounted conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1316 series of PNP Darlington transistors manufactured by ROHM Semiconductor. It serves as a complementary device to the 2SD2195 and 2SD1980 NPN counterparts. The component is designed for general-purpose power switching and amplification tasks where high input impedance and robust current handling are required.

Single Bipolar Transistors Replacement Considerations

The 2SB1580 is a documented equivalent part within the same family, sharing identical electrical characteristics and pinout configurations. Designers may substitute this part if availability permits, ensuring package compatibility remains consistent.