2SB1375,CLARIONF(M

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SB1375 is a silicon PNP triple diffused power transistor designed for audio frequency power amplifier applications. It features a collector-emitter breakdown voltage of -60 V, a maximum collector current of -3 A, and high power dissipation capability of 25 W at a case temperature of 25°C. The device exhibits a low saturation voltage of -1.5 V (max) under specified test conditions and a transition frequency of 9 MHz. It is packaged in a TO-220AB format with a lead-free finish option.

Single Bipolar Transistors Feature Summary

• Triple diffused silicon construction optimized for audio frequency power amplification
• Collector metal fin covered with mold resin to enhance thermal performance
• Low saturation voltage characteristic for efficient power switching
• Designed as the complementary counterpart to the 2SD2012 NPN transistor

Single Bipolar Transistors Applications

• Audio frequency power amplifiers
• General electronics applications including computer and personal equipment
• Industrial robotics control circuits
• Domestic appliance power management

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with the manufacturer or authorized sales representative prior to procurement, as the datasheet indicates specific inquiries are required for this information. Ensure designs strictly adhere to the absolute maximum ratings and derating curves provided in the Toshiba Semiconductor Reliability Handbook to maintain operational safety and prevent reliability degradation under heavy loads.

Single Bipolar Transistors Selection Notes

Select this component when designing audio power stages requiring a PNP output transistor paired with the 2SD2012 NPN device. Consider the 25 W power dissipation limit relative to the thermal resistance characteristics and ensure adequate heat sinking is implemented to maintain the junction temperature within the specified 150°C maximum operating range during continuous DC operation.

Single Bipolar Transistors Part Context

This component belongs to the category of discrete bipolar junction transistors (BJTs) manufactured by Toshiba Semiconductor and Storage. It utilizes a triple diffused process technology to achieve specific electrical characteristics suitable for general-purpose power switching and amplification tasks within consumer and industrial electronic systems.

Single Bipolar Transistors Replacement Considerations

The official complementary substitute part number documented in the datasheet is the 2SD2012 NPN transistor.