2SB14160RA

Single Bipolar Transistors Overview

The Panasonic 2SB14160RA is a silicon PNP epitaxial planar power transistor designed for low-frequency power amplification. It features a high forward current transfer ratio with satisfactory linearity and a low collector-emitter saturation voltage. The device supports automatic insertion via radial taping and operates within a junction temperature range of -55°C to +150°C. It is rated for a continuous collector current of -3A and a peak current of -5A, with a collector power dissipation of 1.5W at 25°C ambient temperature.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio (hFE) ensuring satisfactory linearity
• Low collector-emitter saturation voltage (VCE(sat))
• Radial taping configuration enabling automatic insertion

Single Bipolar Transistors Applications

• Low-frequency power amplification circuits
• General electronic equipment
• Household appliances
• Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix '0RA' against official documentation to confirm package and tape specifications. Confirm the product lifecycle status as maintenance or discontinued before finalizing procurement plans. Ensure compliance with RoHS Directive requirements during integration. Validate all electrical parameters against the latest Panasonic datasheet prior to mass production deployment.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring a complementary PNP transistor to the 2SD2136 NPN type. Consider its -60V collector-base voltage rating and -3A continuous current capability for standard power switching tasks. Evaluate thermal resistance characteristics for designs lacking external heat sinks. Verify that the MT-3-A1 package dimensions align with the target PCB layout constraints.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SB1416 series of silicon PNP transistors. It serves as a complementary device to the 2SD2136 NPN transistor. The series is engineered for general-purpose low-frequency power amplification. It utilizes an epitaxial planar construction for reliable performance in standard electronic assemblies.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic resources for verified substitute part numbers. Cross-reference electrical ratings such as VCEO, IC, and hFE when evaluating alternatives. Ensure any replacement maintains compatibility with the intended application environment.