2SB1559

Single Bipolar Transistors Overview

The Sanken 2SB1559 is a silicon PNP epitaxial planar transistor configured as a Darlington pair, serving as the complement to the 2SD2389 NPN type. It features an MT-100 (TO-3P) package with a maximum collector current of 8 A and a collector-emitter breakdown voltage of -150 V. The device provides a minimum DC current gain of 5000 at -6 A and a typical transition frequency of 65 MHz. Absolute maximum ratings include a collector-base voltage of -160 V, an emitter-base voltage of -5 V, and a power dissipation of 80 W at 25°C case temperature.

Single Bipolar Transistors Feature Summary

• Darlington configuration providing high DC current gain for efficient driver applications
• Epitaxial planar construction ensuring stable thermal performance
• Designed specifically as the complementary counterpart to the 2SD2389 series

Single Bipolar Transistors Applications

• Audio amplifier output stages
• Series voltage regulators
• General-purpose switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank suffix (O, P, or Y) required for your design, as these denote distinct gain ranges. Confirm that the TO-3P mounting style aligns with your thermal management strategy. Ensure the component meets the absolute maximum ratings for your operating conditions, particularly regarding junction temperature limits during high-current pulses.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain PNP driver is needed to complement an NPN stage in push-pull configurations. The 8 A continuous current rating supports substantial load driving capabilities. Consider the thermal resistance characteristics if operating without a dedicated heatsink, as power dissipation drops significantly above ambient temperatures.

Single Bipolar Transistors Part Context

This transistor belongs to Sanken's high-power bipolar transistor lineup, engineered for robust performance in audio and power regulation sectors. As part of a matched pair system with the 2SD2389, it facilitates balanced circuit designs where symmetry between NPN and PNP characteristics is critical for minimizing distortion and improving efficiency.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SB1561 as a similar level replacement with the same pinout and package. Verify electrical parameter compatibility, specifically the lower current gain and voltage ratings of the substitute, before implementation.

Single Bipolar Transistors FAQ

What are the available hFE gain ranks?

The device is available in three gain ranks: O (5000 to 12000), P (6500 to 20000), and Y (15000 to 30000).

What is the typical transition frequency?

The typical transition frequency (fT) is 65 MHz under conditions of VCE = -12V and IE = 1A.

How does the device handle thermal stress?

It has a maximum junction temperature of 150°C and requires derating of power dissipation as the case temperature increases beyond 25°C.