2SB158900L

Single Bipolar Transistors Overview

The Panasonic 2SB1589 is a silicon PNP epitaxial planar transistor designed for low-frequency output amplification. It utilizes the MiniP3-F1 package to facilitate equipment downsizing and automated insertion. Key electrical characteristics include a collector current rating of -1.5 A, peak collector current of -2 A, and collector power dissipation of 1 W at 25°C. The device features a low collector-emitter saturation voltage (VCE(sat)) of typically -0.24 V at IC = -1 A. Additional parameters include a forward current transfer ratio (hFE) ranging from 200 to 700, transition frequency (fT) of 190 MHz, and collector-base cutoff current (ICBO) of -1 µA.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching performance
• Large collector power dissipation capability supporting high-current applications
• Miniature package design enabling equipment size reduction and automated tape packing

Single Bipolar Transistors Applications

• Low-frequency output amplification circuits
• General electronic equipment such as office machines and household appliances
• Communications equipment and measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the current lifecycle status before procurement, as the datasheet indicates maintenance or discontinuation stages. Confirm that the specific application falls within standard general electronics usage, as special applications require prior consultation with sales staff. Ensure compliance with export control laws if applicable. Request the most up-to-date product standards at the final design stage to guarantee specification accuracy.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a PNP transistor with high current handling and low saturation voltage in a compact form factor. Consider the thermal derating curve when operating above 25°C ambient temperature. Verify that the required hFE gain falls within the specified range for the target collector current. Ensure the circuit operates within the absolute maximum ratings for voltage and current to prevent device failure.

Single Bipolar Transistors Part Context

This component belongs to Panasonic's lineup of silicon PNP transistors intended for general-purpose amplification and switching. It is housed in the MiniP3-F1 package, which supports automatic insertion via tape packing. The device is categorized for use in standard applications like consumer electronics and industrial measurement tools, distinct from specialized automotive or aerospace reliability requirements.

Single Bipolar Transistors Replacement Considerations

Consult Panasonic Industry sales representatives for verified substitute part numbers or updated product standards. Do not assume direct pin-compatible replacements without verifying electrical specifications against the latest manufacturer documentation.

Single Bipolar Transistors FAQ

What is the maximum collector power dissipation?

The maximum collector power dissipation is 1 W at an ambient temperature of 25°C.

What is the typical forward current transfer ratio (hFE)?

The forward current transfer ratio ranges from a minimum of 200 to a typical value of 700 at a collector current of -400 mA.

Is this component suitable for aerospace applications?

No, it is intended for standard applications. Special applications like aerospace require exceptional quality and reliability, necessitating prior consultation with Panasonic sales staff.