2SB507D

Single Bipolar Transistors Overview

The 2SB507D is a PNP epitaxial planar silicon transistor designed for audio frequency power amplifier applications. It features a low saturation voltage and high current gain, making it suitable for general-purpose switching and amplification tasks in consumer electronics.

Single Bipolar Transistors Feature Summary

• Epitaxial planar silicon construction for reliable performance
• Optimized for audio frequency power amplifier use
• Low collector-to-emitter saturation voltage

Single Bipolar Transistors Applications

• Audio frequency power amplifiers
• General-purpose switching circuits
• Consumer electronic equipment

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'D' against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure the component matches the required thermal characteristics for the intended application. Cross-reference with equivalent part numbers from other manufacturers if supply constraints exist.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring a PNP transistor with moderate current handling capabilities. Consider the thermal resistance and package style when designing heat dissipation strategies. Verify compatibility with the driving circuit's voltage levels and switching speed requirements.

Single Bipolar Transistors Part Context

This device belongs to the family of bipolar junction transistors (BJTs) used in analog and power applications. It complements NPN counterparts like the 2SD1640 in push-pull amplifier configurations. The design focuses on efficiency and linearity for audio signal processing.