2SB825R

Single Bipolar Transistors Overview

The onsemi 2SB825R is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 7 A, making it suitable for medium-power circuit designs. The device is housed in a TO-220AB through-hole package, which provides robust mechanical stability and efficient thermal dissipation capabilities required for high-current operations. This component belongs to the standard discrete semiconductor product category, offering reliable performance for industrial and consumer electronics systems where moderate voltage handling and substantial current capacity are necessary.

Single Bipolar Transistors Feature Summary

• PNP polarity configuration for complementary circuit topologies
• High current handling capability up to 7 A
• Through-hole mounting for secure board integration
• Thermal management optimized via TO-220AB leaded package

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• Complementary amplifier stages
• Industrial control logic interfaces
• Consumer electronics power regulation

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the design requirements before procurement. Ensure that the TO-220AB package dimensions match the PCB footprint constraints. Confirm thermal resistance values align with the system's heat dissipation strategy. Cross-reference the manufacturer part number to avoid counterfeit components. Validate that the 50V rating meets the peak voltage stresses in the target application environment.

Single Bipolar Transistors Selection Notes

Select this component when a PNP BJT with 7 A current capacity and 50 V breakdown voltage is required. The TO-220AB package is ideal for applications needing effective heat sinking without complex surface-mount reflow processes. Consider the base current drive requirements relative to the hFE gain at the operating point. Evaluate thermal performance under continuous load conditions to ensure junction temperature remains within safe limits for long-term reliability.

Single Bipolar Transistors Part Context

The 2SB825R is part of onsemi’s extensive portfolio of discrete bipolar transistors. These devices support fundamental electronic functions across various sectors, including automotive, industrial, and consumer markets. As a standard PNP transistor, it complements NPN counterparts in push-pull configurations. The product line emphasizes robustness and availability, serving as a foundational building block for power management and signal processing circuits in diverse electronic assemblies.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for direct replacements. Verify pinout compatibility and electrical parameters such as Vceo and Ic before substituting. Ensure the alternative device supports the same TO-220AB package or requires adapter modifications.