Single Bipolar Transistors 2SB852KT146B product image

2SB852KT146B

$0.62
  • Description:TRANS PNP DARL 32V 0.3A SMT3
  • Series:-

SKU:fe6c61323453 Category: Brand:

  
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2SB852KT146B is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP DARL 32V 0.3A SMT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB852KT146B

  • Description:TRANS PNP DARL 32V 0.3A SMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):300 mA
  • Voltage - Collector Emitter Breakdown (Max):32 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 400µA, 200mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:5000 @ 100mA, 5V
  • Power - Max:200 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SMT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB852KT146B

2SB852KT146B

Single Bipolar Transistors Overview

The 2SB852KT146B is a PNP high-gain amplifier transistor manufactured by Rohm Semiconductor. It utilizes a Darlington connection to achieve high DC current gain and features a built-in 4 kΩ resistor between the base and emitter terminals. The device operates with a collector-emitter voltage of -32 V and a maximum collector current of -0.3 A. It is housed in an SOT-346 (SMT3) surface-mount package, which corresponds to the SC-59 standard.

Single Bipolar Transistors Feature Summary

  • Darlington configuration provides high DC current gain for amplification applications.
  • Integrated 4 kΩ base-to-emitter resistor simplifies circuit design.
  • Compact SOT-346 surface-mount package suitable for space-constrained designs.

Single Bipolar Transistors Applications

  • High gain amplifier circuits
  • General-purpose electronic equipment
  • Audio and OA equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'B' against the official Rohm datasheet to confirm if it denotes a distinct marking or packaging variation compared to the standard 2SB852K. Ensure that the component meets RoHS compliance requirements for your target market. Confirm storage conditions to prevent solderability degradation before assembly.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high current gain and integrated base resistance is required. The built-in resistor eliminates the need for external biasing components, reducing board space. Consider the -32 V rating and -0.3 A current limit to ensure compatibility with the intended signal levels and load requirements.

Single Bipolar Transistors Part Context

This part belongs to Rohm's lineup of small-signal bipolar junction transistors designed for general-purpose amplification. It serves as a complement to other high-gain devices like the 2SD1383K. The SMT3 package allows for automated surface-mount assembly, supporting efficient manufacturing processes for consumer electronics and office automation equipment.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SD1383K as a complementary device. Verify pinout compatibility and electrical characteristics before substituting with other PNP Darlington transistors from different manufacturers.

Single Bipolar Transistors FAQ

What is the function of the internal resistor?

The 2SB852KT146B includes a built-in 4 kΩ resistor connected between the base and emitter terminals to simplify circuit design and improve stability.

Is this component suitable for automotive applications?

No. Rohm specifies that this product is not recommended for use in automotive equipment due to reliability standards required for such environments.

What is the transition frequency of the device?

The transition frequency (fT) is typically 200 MHz under the condition of VCE = -5 V and IE = 10 mA at 100 MHz.

2SB852KT146B2SB852KT146B
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