Single Bipolar Transistors 2SB927S-AE product image

2SB927S-AE

$0.86
  • Description:TRANS PNP 25V 2.5A 3-MP
  • Series:-

SKU:3007b6d784f5 Category: Brand:

  
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2SB927S-AE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 25V 2.5A 3-MP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB927S-AE

  • Description:TRANS PNP 25V 2.5A 3-MP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2.5 A
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 75mA, 1.5A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:140 @ 100mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:3-MP
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB927S-AE

2SB927S-AE

Single Bipolar Transistors Overview

The onsemi 2SB927S-AE is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 25 V and a continuous collector current capability of 2.5 A. The device operates with a transition frequency of 150 MHz, supporting high-speed signal processing tasks. With a power dissipation rating of 1 W, it is suitable for through-hole mounting configurations. This component provides reliable performance in low-voltage circuits requiring moderate current handling and fast switching characteristics.

Single Bipolar Transistors Feature Summary

  • PNP configuration for complementary circuit designs
  • High-speed switching capability at 150 MHz
  • Robust 2.5 A current handling capacity
  • Through-hole package for secure mechanical attachment

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Amplifier stages in audio or RF systems
  • Complementary driver circuits
  • Low-voltage logic interface applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'AE' against the manufacturer's official documentation to ensure compliance with current RoHS standards and material composition requirements. Confirm that the through-hole package variant matches the intended PCB footprint and thermal management strategy. Cross-reference the datasheet revision date to validate electrical parameter tolerances before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when a PNP BJT is required for low-voltage, medium-current applications. Ensure the 25 V breakdown voltage aligns with the system's maximum operating limits. Consider the 150 MHz transition frequency for high-speed requirements. Evaluate thermal constraints based on the 1 W power dissipation rating and the specific thermal resistance of the chosen through-hole package.

Single Bipolar Transistors Part Context

The 2SB927S-AE belongs to onsemi's portfolio of standard discrete bipolar transistors. These components are engineered for cost-effective integration into consumer electronics, industrial controls, and automotive subsystems. As part of the broader BJT family, it offers standardized pinouts and predictable electrical behavior, facilitating straightforward design implementation across various analog and digital switching platforms.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers for the 2SB927S-AE are not available in the provided source data. Designers should consult official cross-reference tools or manufacturer catalogs for equivalent PNP transistors meeting identical 25 V, 2.5 A, and 150 MHz specifications.

2SB927S-AE2SB927S-AE
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