2SB986T

Single Bipolar Transistors Overview

The onsemi 2SB986T is a single PNP bipolar junction transistor (BJT) housed in a TO-126 plastic epoxy package. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 4 A. The device operates with a transition frequency of 150 MHz and supports a maximum power dissipation of 1.2 W. Designed for through-hole mounting, it functions as a discrete silicon component suitable for general-purpose switching and amplification applications within standard electronic circuits.

Single Bipolar Transistors Feature Summary

• Single PNP bipolar junction transistor configuration
• Through-hole TO-126 plastic epoxy packaging
• High current handling capability up to 4 A
• Transition frequency of 150 MHz for signal processing

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Amplifier stages
• Power management modules
• Signal conditioning systems

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer lot code and date code against the original datasheet specifications to ensure authenticity. Confirm that the TO-126 package dimensions match the required board layout constraints. Check for any regional compliance certifications required by the end-use market. Ensure storage conditions adhere to moisture sensitivity levels if applicable. Validate pinout orientation before soldering to prevent circuit damage.

Single Bipolar Transistors Selection Notes

Select this component when a high-current PNP BJT is required in a through-hole format. The 50 V breakdown voltage suits low-to-medium voltage applications. Consider the 1.2 W thermal limit for heat dissipation requirements. Compare against N-channel alternatives if complementary symmetry is needed. Evaluate the 150 MHz frequency response against signal speed demands.

Single Bipolar Transistors Part Context

This part belongs to the discrete semiconductor category, specifically within the bipolar junction transistor family. It serves as a fundamental active component for controlling current flow in electronic designs. The TO-126 package provides robust mechanical stability and thermal performance compared to smaller surface-mount options, making it suitable for higher power density tasks.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit parameters before attempting substitution with generic equivalents.