2SC1653-T1B-A

Single Bipolar Transistors Overview

The 2SC1653-T1B-A is a small signal NPN silicon bipolar junction transistor manufactured by Renesas Electronics Corporation. It features a collector-emitter voltage (VCEO) of 130 V and a continuous collector current (IC) of 50 mA. The device has a typical transition frequency (fT) of 120 MHz and a maximum power dissipation of 150 mW. It is housed in a surface-mount 3-MINIMOLD package with dimensions of 3 mm width and 1.4 mm thickness. The saturation voltage (VCE(sat)) is specified at 0.3 V.

Single Bipolar Transistors Feature Summary

• NPN silicon epitaxial construction for reliable switching performance
• Surface-mount 3-MINIMOLD package design for compact integration
• High voltage capability suitable for display tube drive applications

Single Bipolar Transistors Applications

• Display tube drive circuits
• High voltage switching applications
• Small signal amplification stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix -T1B-A against official Renesas documentation to confirm package type and tape-and-reel specifications. Confirm that the component is available for new designs, as some 2SC1653 variants are restricted to existing customers. Cross-reference electrical parameters such as VCEO and IC with the latest datasheet to ensure compatibility with system requirements.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring a 130 V NPN switch with low saturation voltage. Ensure the 150 mW power dissipation rating meets thermal constraints within the 3-MINIMOLD footprint. Verify that the 120 MHz transition frequency is sufficient for the intended signal frequencies. Consider availability status as legacy support may apply to certain product lines.

Single Bipolar Transistors Part Context

This part belongs to the 2SC1653 series of small signal bipolar transistors originally developed for display driver and high-voltage switching roles. Renesas continues to support this family for established designs. The -T1B-A designation specifies the surface-mount variant, distinguishing it from through-hole or other packaging options within the broader component family.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the 130 V VCEO, 50 mA IC, and 3-MINIMOLD package. Verify pinout compatibility and thermal characteristics. Check manufacturer-specific notes regarding obsolescence or lifecycle status before implementing alternative components.