2SC2235-O,F(J

Description：TRANS NPN 120V 0.8A TO-92MOD
Series：-

SKU:b3adf76869fb Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC2235-O,F(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 120V 0.8A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2235-O,F(J

Description：TRANS NPN 120V 0.8A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：800 mA
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：1V @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 100mA, 5V
Power - Max：900 mW
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC2235-O,F(J

2SC2235-O,F(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2235-O,F(J is a silicon NPN epitaxial transistor utilizing the PCT process. It features a collector-emitter voltage of 120 V, a maximum collector current of 800 mA, and a power dissipation rating of 900 mW. The device provides a minimum DC current gain (hFE) of 80 at 100 mA and 5 V, with a transition frequency of 120 MHz. It is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

Designed for audio power amplifier applications
Suitable for driver stage amplifier circuits
Complementary to the 2SA965 PNP transistor

Single Bipolar Transistors Applications

Audio power amplifier circuits
Driver stage amplifier applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix configuration against the datasheet marking guide. Confirm RoHS compatibility status through official Toshiba channels as indicated by lot number markings. Ensure the ordering code matches the required hFE classification range before procurement.

Single Bipolar Transistors Selection Notes

Select this component for general electronics applications requiring high-voltage switching or amplification within the specified limits. Review the Safe Operating Area curves for thermal derating requirements. Validate suitability against the intended application's reliability standards.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SC series of NPN transistors. It is specifically engineered for use in audio and driver stages. The device utilizes an epitaxial structure for improved performance characteristics compared to standard diffused types.

Single Bipolar Transistors Replacement Considerations

The 2SA965 serves as the complementary PNP counterpart. Verify pinout compatibility and electrical parameters when substituting with other NPN transistors from different manufacturers.