2SC2235-Y(MBSH1,FM

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2235-Y(MBSH1,FM is a silicon NPN epitaxial transistor manufactured using the PCT process. It features a maximum collector-emitter voltage of 120 V and a continuous collector current rating of 800 mA. The device provides a transition frequency of 120 MHz and a maximum power dissipation of 900 mW. DC current gain ranges from 120 to 240 for the Y classification. It utilizes a JEDEC TO-92MOD package with a maximum junction temperature of 150 °C.

Single Bipolar Transistors Feature Summary

• Complementary pairing with the 2SA965 PNP transistor
• High-voltage switching capability up to 120 V
• Optimized for audio power amplifier driver stages

Single Bipolar Transistors Applications

• Audio power amplifier applications
• Driver stage amplifier applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status and binning classifications. Confirm component availability as distribution channels may list obsolete or discontinued stock. Ensure design-in reviews align with the manufacturer's reliability handbook regarding derating concepts under heavy loads.

Single Bipolar Transistors Selection Notes

Select this component for general electronics applications requiring high-voltage NPN amplification in through-hole designs. Evaluate thermal management requirements carefully due to the 900 mW power dissipation limit within the TO-92MOD package. Ensure operating conditions remain within absolute maximum ratings to maintain long-term reliability.

Single Bipolar Transistors Part Context

This component belongs to the 2SC2235 series of silicon NPN transistors designed by Toshiba Semiconductor. It is engineered specifically for use in audio power and driver stage amplifier circuits. The device represents a standard discrete semiconductor solution for general-purpose electronic equipment manufacturing.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA965 as the complementary counterpart. Verify pinout compatibility and electrical parameters when substituting with other NPN transistors offering similar voltage and current ratings.

Single Bipolar Transistors FAQ

What is the DC current gain range for the Y classification?

For the Y classification, the DC current gain (hFE) ranges from 120 to 240 at VCE = 5 V and IC = 100 mA.

Is this component suitable for aerospace or medical equipment?

No. The product is not intended for unintended uses such as aerospace, medical equipment, or nuclear facilities unless specifically permitted by Toshiba.

What is the maximum collector-base voltage rating?

The maximum collector-base voltage (VCBO) rating is 120 V at an ambient temperature of 25 °C.