2SC2462LBTL-E

Single Bipolar Transistors Overview

The 2SC2462LBTL-E is a silicon NPN epitaxial planar bipolar junction transistor manufactured by Renesas Electronics Corporation. Designed for surface-mount applications, this component features a collector-emitter breakdown voltage of 40 V and a maximum continuous collector current of 100 mA. The device is housed in a compact 3-MPAK package, which facilitates efficient thermal management with a total power dissipation rating of 150 mW. It is classified as a small-signal transistor suitable for general-purpose switching and amplification tasks within low-power electronic circuits.

Single Bipolar Transistors Feature Summary

• Utilizes silicon NPN epitaxial planar technology for reliable operation
• Engineered for surface-mount assembly to support automated manufacturing processes
• Provides adequate gain characteristics for small-signal amplification duties

Single Bipolar Transistors Applications

• General-purpose signal amplification in consumer electronics
• Low-power switching applications in portable devices
• Interface circuits requiring small-signal control

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix LBTL-E against the manufacturer's latest datasheet to ensure compatibility with required tape-and-reel packaging specifications. Confirm that the RoHS status aligns with environmental compliance requirements for the target assembly process. Cross-reference the pinout configuration with the PCB footprint design to prevent installation errors during production.

Single Bipolar Transistors Selection Notes

Select this component when circuit design requires an NPN transistor with a 40 V collector-emitter voltage rating and a 100 mA current limit. The choice is appropriate for designs constrained by space due to the 3-MPAK surface-mount package. Ensure that the thermal environment supports the 150 mW power dissipation capability without exceeding junction temperature limits defined in the electrical characteristics table.

Single Bipolar Transistors Part Context

This part belongs to the broader family of Renesas small-signal bipolar transistors. It shares similar electrical topologies with other NPN variants but is distinguished by its specific voltage ratings and surface-mount packaging format. The designation indicates a specific binning or packaging variant within the manufacturer's product line intended for high-volume surface-mount technology integration.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for equivalent NPN transistors with matching 40 V and 100 mA ratings. Verify pinout compatibility before replacing with alternative packages such as SOT-23 or SC-70 variants. Ensure thermal resistance characteristics of potential substitutes meet the system's heat dissipation requirements.