2SK536-TB-E

Single FETs, MOSFETs Overview

The 2SK536-TB-E is an N-Channel Enhancement Mode Silicon MOSFET manufactured by Sanyo Semiconductor, now part of ON Semiconductor. It is designed for analog switch applications and features a surface-mount package. The device supports a drain-source voltage of 50 V and a continuous drain current of 100 mA at ambient temperature. With a low on-resistance and minimal power dissipation requirements of 200 mW, it serves as a compact solution for signal routing in electronic circuits.

Single FETs, MOSFETs Feature Summary

• N-Channel enhancement mode silicon construction
• Optimized for analog switching operations
• Surface-mount packaging for automated assembly

Single FETs, MOSFETs Applications

• Analog signal switching
• Signal routing in consumer electronics
• Low-voltage circuit protection

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation carefully, as Sanyo Semiconductor assets were acquired by ON Semiconductor. Ensure the ordering suffix matches the specific tape-and-reel or bulk configuration required for your production line. Cross-reference the datasheet revision to confirm pinout compatibility with existing PCB footprints before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring low-voltage analog switching with minimal signal distortion. The 50 V rating provides sufficient headroom for standard logic-level signals. Consider the thermal constraints of the small surface-mount package, as the 200 mW dissipation limit restricts usage in high-current continuous duty cycles without adequate board-level heat sinking.

Single FETs, MOSFETs Part Context

This MOSFET belongs to the Sanyo/ON Semiconductor discrete transistor family, specifically engineered for small-signal applications. It complements other low-power FETs in the portfolio, offering a balance between switching speed and leakage current characteristics suitable for portable devices and battery-operated equipment where space and efficiency are critical design parameters.

Single FETs, MOSFETs Replacement Considerations

Check ON Semiconductor's official substitution guide for equivalent N-channel MOSFETs with matching 50 V ratings and SOT-23 compatible packages. Verify that any alternative device maintains similar gate threshold voltages and on-resistance values to ensure circuit performance parity.