2STW4466

Single Bipolar Transistors Overview

The STMicroelectronics 2STW4466 is a high-power NPN epitaxial planar bipolar transistor designed for linear and switching applications. It features a collector-emitter voltage (VCEO) of 80 V, a continuous collector current (IC) of 6 A, and a total dissipation (PTOT) of 60 W at 25°C case temperature. The device exhibits a typical transition frequency (fT) of 20 MHz and is fully characterized up to a maximum operating junction temperature of 150°C. Manufactured using low voltage planar technology with a base island layout, it offers good gain linearity and low saturation voltage.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability with VCEO rated at 80 V
• Good gain linearity coupled with low collector-emitter saturation voltage
• Fully characterized performance up to a maximum junction temperature of 150°C

Single Bipolar Transistors Applications

• Audio power amplifier output stages
• High fidelity audio frequency amplifiers
• Linear and switching applications

Single Bipolar Transistors Procurement Notes

Verify the obsolete status of this component before initiating any procurement process. Confirm availability through authorized distributors or secondary market suppliers. Ensure that the TO-247 package dimensions match your thermal management design requirements. Check for lead-free ECOPACK compliance if environmental regulations apply to your assembly process.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring an NPN power transistor with 80 V rating and 6 A current capacity. It serves as the complementary pair to the 2STW1693 PNP transistor. Consider its 60 W dissipation capability and thermal resistance when designing heat sinks. Verify that the 20 MHz transition frequency meets the bandwidth requirements of your specific application circuit.

Single Bipolar Transistors Part Context

This device belongs to the family of high-power NPN epitaxial planar bipolar transistors from STMicroelectronics. It utilizes low voltage planar technology with a base island layout to achieve specific electrical characteristics. The component is housed in a TO-247 surface-mounting power package, suitable for high-current applications requiring robust mechanical mounting and efficient heat dissipation.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2STW1693 as the complementary PNP device. No direct substitute part numbers are listed in the official documentation. Designers should evaluate alternative NPN transistors with similar 80 V, 6 A specifications if supply constraints exist.

Single Bipolar Transistors FAQ

What is the complementary device to the 2STW4466?

The 2STW1693 is the complementary PNP transistor to the 2STW4466.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

What packaging does the 2STW4466 use?

The device is available in a TO-247 tube package.