3SK324UG-TL-E

Description：RF MOSFET 3.5V CMPAK-4
Series：-

SKU:1e66c7b5c455 Category: RF FETs, MOSFETs Brand: Renesas Electronics Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

3SK324UG-TL-E is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is RF MOSFET 3.5V CMPAK-4. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for 3SK324UG-TL-E

Description：RF MOSFET 3.5V CMPAK-4
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Frequency：-
Gain：24dB
Voltage - Test：3.5 V
Current Rating (Amps)：-
Noise Figure：1dB
Current - Test：10 mA
Power - Output：-
Voltage - Rated：6 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SC-82A, SOT-343
Supplier Device Package：CMPAK-4
Configuration：N-Channel Dual Gate

RF FETs, MOSFETs datasheet and documents for 3SK324UG-TL-E

3SK324UG-TL-E

RF FETs, MOSFETs Overview

The 3SK324UG-TL-E is a dual-gate MOSFET designed for UHF low-noise amplification applications. It operates at a supply voltage of 3.5V with a current rating of 10mA. The device features typical noise figure (NF) of 1.0 dB and typical power gain (PG) of 24 dB at 900 MHz. Packaged in Tape & Reel (TR), it is optimized for improved signal-to-noise ratio in wireless communication systems.

RF FETs, MOSFETs Feature Summary

Dual-gate MOSFET technology optimized for UHF low-noise applications
Improved signal-to-noise ratio for enhanced performance
Low noise characteristics suitable for sensitive RF front-ends

RF FETs, MOSFETs Applications

UHF low-noise amplification in wireless communication systems
RF front-end modules requiring high gain and low noise
Signal processing circuits demanding improved signal-to-noise ratio

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors due to obsolete status. Confirm package type matches Tape & Reel specifications. Check datasheet for pinout compatibility with existing designs. Ensure operating conditions align with 3.5V supply and 10mA current ratings. Validate thermal behavior for intended application environment.

RF FETs, MOSFETs Selection Notes

Select this component for UHF applications requiring low noise figure and high gain. Consider the dual-gate structure for improved isolation and stability. Evaluate system requirements against the 1.0 dB NF and 24 dB PG specifications at 900 MHz. Assess compatibility with 3.5V supply voltage and 10mA current consumption constraints.

RF FETs, MOSFETs Part Context

This part belongs to Renesas' RF & Microwave category, specifically dual-gate MOSFETs. It complements other RF components in wireless communication solutions. The device supports design-in for systems needing reliable UHF amplification with minimal noise degradation.