4N38A(SHORT,F)

Description：OPTOISO 2.5KV TRANS W/BASE 6-DIP
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:fe5b8da4aa0c Category: Transistor, Photovoltaic Output Optoisolators Brand: Toshiba Semiconductor and Storage

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Product introduction

4N38A(SHORT,F) is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is OPTOISO 2.5KV TRANS W/BASE 6-DIP. Review the specifications below when checking this part for your BOM.

Transistor, Photovoltaic Output Optoisolators specifications for 4N38A(SHORT,F)

Description：OPTOISO 2.5KV TRANS W/BASE 6-DIP
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Number of Channels：1
Voltage - Isolation：2500Vrms
Current Transfer Ratio (Min)：10% @ 10mA
Current Transfer Ratio (Max)：-
Turn On / Turn Off Time (Typ)：3µs, 3µs
Rise / Fall Time (Typ)：-
Input Type：DC
Output Type：Transistor with Base
Voltage - Output (Max)：80V
Current - Output / Channel：100mA
Voltage - Forward (Vf) (Typ)：1.15V
Current - DC Forward (If) (Max)：80 mA
Vce Saturation (Max)：1V
Operating Temperature：-55°C ~ 100°C
Mounting Type：Through Hole
Package / Case：6-DIP (0.300", 7.62mm)
Supplier Device Package：6-DIP

Transistor, Photovoltaic Output Optoisolators datasheet and documents for 4N38A(SHORT,F)

4N38A(SHORT,F)

Transistor, Photovoltaic Output Optoisolators Overview

The 4N38A(SHORT,F) is a single-channel transistor output optocoupler manufactured by Toshiba Semiconductor and Storage. It features a DIP-6 package with tin/lead (Sn/Pb) terminal plating. The device provides electrical isolation with a minimum collector-emitter breakdown voltage of 80V and a maximum insulation voltage of 2500V. Key electrical parameters include a nominal current transfer ratio of 100%, a maximum dark power supply of 50nA, and a maximum forward current of 0.08A. The component operates within a temperature range of -55°C to 100°C.

Transistor, Photovoltaic Output Optoisolators Feature Summary

Single-channel configuration for isolated signal transmission
Transistor output structure suitable for digital switching applications
High insulation voltage capability for safety isolation
Standard DIP-6 through-hole packaging

Transistor, Photovoltaic Output Optoisolators Applications

General-purpose signal isolation in industrial control systems
Interface circuits between microprocessors and peripheral devices
Switching applications requiring galvanic isolation

Transistor, Photovoltaic Output Optoisolators Procurement Notes

Verify the specific suffix designation against official Toshiba documentation to confirm pin configuration and material compliance. Ensure that the tin/lead terminal plating meets project requirements regarding lead-free regulations if applicable. Confirm that the operating temperature range aligns with the environmental conditions of the target application before finalizing procurement specifications.

Transistor, Photovoltaic Output Optoisolators Selection Notes

Select this component when a standard transistor output optocoupler with moderate isolation voltage is required. The 80V breakdown voltage limits suitability for high-voltage side sensing; consider alternative models for higher voltage isolation needs. Verify compatibility with system logic levels due to the specified current transfer ratio characteristics. Ensure the DIP-6 footprint matches the printed circuit board layout constraints.

Transistor, Photovoltaic Output Optoisolators Part Context

This part belongs to the 4N38 series of general-purpose optocouplers from Toshiba Semiconductor and Storage. The series is designed for basic isolation tasks where cost-effectiveness and standard performance are prioritized over high-speed or high-current capabilities. The SHORT variant typically denotes a specific mechanical dimension or lead form adjustment within the standard DIP-6 family.