7140LA20JG

Overview

The Renesas Electronics Corporation 7140LA20JG is an asynchronous dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 8 kilobits, organized as 1K words by 8 bits. The device features a parallel interface with a maximum access time of 20 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and supports surface-mount installation in a 52-lead Plastic Leadless Chip Carrier (PLCC) package measuring 19.13mm x 19.13mm. The component is rated for commercial operating temperatures between 0°C and 70°C.

Feature Summary

• Dual-port architecture enabling independent simultaneous read/write operations on both ports.

Applications

• High-speed data buffering in communication systems.

Procurement Notes

Verify the exact suffix designation, as 'JG' may differ from 'JG8'. Confirm RoHS compliance status, as sources indicate variations across the series. Check end-of-life notices and substitute part availability due to discontinuation trends. Validate package dimensions against PCB footprint requirements before integration.

Selection Notes

Select this component for designs requiring independent port access without bus contention. Ensure the system voltage remains within the 4.5V to 5.5V range. Verify that the 20ns access speed meets the timing constraints of the host processor. Consider the PLCC package size for board space limitations.

Part Context

This part belongs to the IDT/Renesas 7140LA family of high-performance dual-port SRAMs. These devices are designed for applications requiring fast, non-blocking memory access. The family typically includes variants with different access speeds and packaging options to suit various industrial and commercial needs.

Replacement Considerations

Check for direct pin-compatible substitutes within the same manufacturer's portfolio. Verify electrical specifications match exactly. Consider legacy equivalents if the original is discontinued.