71P74604S200BQ

Memory IC Overview

The IDT71P74604S200BQ is a synchronous QDR II SRAM with an 18 Mbit capacity organized as 1M x 18. It operates at a clock frequency of 200 MHz with an access time of 8.4 ns. The device uses a 165-CABGA package measuring 13x15 mm and supports parallel interface communication.

Memory IC Feature Summary

• Supports high-speed data transfer via QDR II architecture
• Features fully pipelined outputs for system performance
• Utilizes single R/W control pin for simplified operation

Memory IC Applications

• High-performance networking systems
• Telecommunications infrastructure
• Data routing equipment

Memory IC Procurement Notes

Verify the specific suffix 'BQ' against official Renesas or IDT documentation to confirm package type and temperature range. Confirm RoHS compliance status through current manufacturer declarations, as component specifications may evolve over time.

Memory IC Selection Notes

Select this component when a 200 MHz synchronous SRAM with 18 Mbit density is required. Ensure the design accommodates the 165-CABGA footprint and 1.7V to 1.9V supply voltage requirements specified for this memory class.

Memory IC Part Context

This part belongs to the IDT 71P74 series of QDR II SRAMs. It is manufactured by Integrated Device Technology, which is now part of Renesas Electronics Corporation. The series is designed for applications requiring high bandwidth and low latency memory solutions.

Memory IC Replacement Considerations

The IDT71P74804S200BQG is a related variant within the same family offering similar speed and interface characteristics. Verify electrical compatibility and pinout alignment before substitution.