71T75602S100BG

Overview

The Renesas Electronics Corporation 71T75602S100BG is a synchronous single data rate zero bus turnaround static random access memory integrated circuit. It provides an 18-megabit storage capacity organized as 512K words by 36 bits. The device operates with a maximum clock frequency of 100 MHz and features a typical access time of 5 nanoseconds. It utilizes a parallel interface for data transfer and requires a supply voltage ranging from 2.375 volts to 2.625 volts. The component is housed in a 119-pin plastic ball grid array package measuring 14 by 22 millimeters.

Feature Summary

• Supports synchronous single data rate operation with zero bus turnaround technology for efficient data throughput.
• Features a wide 36-bit data bus width suitable for high-performance system applications.
• Operates within a standard industrial temperature range for reliable performance.
• Designed for surface mount installation using a compact ball grid array footprint.

Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in network infrastructure devices
• Data storage in industrial control systems requiring fast access times

Procurement Notes

Verify the exact suffix designation, as the provided model lacks the final package code character found in official listings like BGGI. Confirm RoHS compliance status, as variants differ significantly between lead-free and non-compliant versions. Check current lifecycle status, as this product line has been subject to discontinuance notifications. Ensure the specific pinout matches the target PCB design before procurement.

Selection Notes

Select this component when a 36-bit wide synchronous SRAM interface is required at 100 MHz speeds. Compare against other members of the 71T75602 family that offer different clock speeds or package types such as TQFP. Ensure the system power supply can maintain the specified voltage range under all load conditions. Verify thermal management capabilities for the operating temperature range if ambient conditions are extreme.

Part Context

This part belongs to the IDT 71T75602 series of synchronous ZBT SRAMs, now manufactured by Renesas Electronics following the acquisition of Integrated Device Technology. The series offers various speed grades and package options to accommodate different design constraints. This specific variant focuses on the 100 MHz performance tier within the broader portfolio of high-density memory solutions.

Replacement Considerations

Official substitutes include the 71T75602S100BGGI which shares identical electrical specifications but includes a specific manufacturer label suffix. Other speed grades like the S166 or S133 variants require careful timing analysis due to different access characteristics. Cross-reference with the official discontinuance notice for approved replacement recommendations.