71V321L25TFI8

Overview

The Renesas Electronics Corporation 71V321L25TFI8 is a dual-port static random-access memory (SRAM) device organized as 2K x 8 bits, providing a total storage capacity of 16 kbit. It operates with a single 3.3V power supply, supporting a voltage range from 3.0V to 3.6V. The component features asynchronous parallel interfaces for both ports, enabling independent read and write operations. Access times are specified at 25 ns. Maximum power consumption is rated at 130 mA. The device supports industrial temperature ranges from -40°C to +85°C and is housed in a 64-pin TQFP surface-mount package.

Feature Summary

• True dual-ported architecture allowing simultaneous access to the same memory location by two independent processors
• On-chip port arbitration logic manages conflicts during concurrent access attempts
• Interrupt flags facilitate direct communication between the two ports without host intervention
• Automatic power-down mode reduces standby current when chip enable signals are inactive

Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in embedded processing systems
• Data logging applications requiring non-volatile-like retention via battery backup
• Real-time signal processing buffers in industrial control units

Procurement Notes

Verify the specific suffix 'TFI8' against official Renesas documentation to confirm pinout compatibility and moisture sensitivity level. Ensure the selected variant matches the required operating temperature range and packaging type for your assembly process. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Confirm RoHS compliance status if environmental regulations apply to your final product design.

Selection Notes

Select this component when simultaneous independent access to shared memory is critical for system performance. The 25 ns access time suits high-frequency asynchronous applications. Consider the 64-pin TQFP package constraints for PCB layout density. Evaluate power requirements against the 130 mA maximum active current and standby specifications. Verify that the 3.3V logic levels align with the interfacing microcontroller or processor I/O standards.

Part Context

This device belongs to the Renesas 71V321 series of dual-port SRAMs. The series offers various speed grades and package options to accommodate different design constraints. The 71V321L25 variant specifically denotes the 25 ns speed grade within the low-power 3.3V family. These components are designed for applications requiring high bandwidth and low latency data sharing between multiple masters.

Replacement Considerations

Official substitutes include other variants within the 71V321 series with compatible pinouts and electrical characteristics. Verify functional equivalence regarding access times and power consumption before substitution. Check for any changes in package dimensions or lead finishes that might affect mechanical fit.