A2G35S160-01SR3

RF FETs, MOSFETs Overview

The A2G35S160-01SR3 is a 32 W average power RF GaN transistor designed for cellular base station applications in the 3400 to 3600 MHz band. It operates at a drain voltage of 48 Vdc with a quiescent current of 190 mA. The device features high terminal impedances and is optimized for Doherty architectures and digital predistortion systems. It utilizes an NI-400S-2S surface-mount package.

RF FETs, MOSFETs Feature Summary

• High terminal impedances facilitate optimal broadband performance across the operating frequency range.
• Designed specifically for integration into digital predistortion error correction systems.
• Optimized topology supports efficient implementation in Doherty amplifier configurations.

RF FETs, MOSFETs Applications

• Cellular base station transmitters
• Doherty power amplifier designs
• Digital predistortion linearization systems

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized NXP channels due to potential counterfeit risks. Confirm RoHS compliance status via official documentation. Ensure proper handling protocols are followed given the ESD sensitivity classification. Validate supply chain integrity prior to procurement to guarantee device reliability and performance specifications.

RF FETs, MOSFETs Selection Notes

Select this component for wideband cellular infrastructure requiring high linearity and efficiency. Ensure bias sequencing follows depletion mode requirements to prevent damage. Verify thermal management capabilities meet junction temperature limits. Confirm impedance matching networks align with the device's high terminal impedance characteristics for optimal gain and efficiency.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power GaN Transistor family from Freescale Semiconductor, now NXP. It targets high-power RF applications in the 3.4–3.6 GHz spectrum. The device represents silicon-based GaN technology optimized for modern communication standards requiring robust performance under high peak-to-average ratios.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Evaluate alternative devices based on matching frequency range, output power, and package compatibility. Consult NXP technical support for specific replacement recommendations if this component becomes unavailable.

RF FETs, MOSFETs FAQ

What is the recommended bias sequence for turning on the A2G35S160-01SR3?

Set VGS to pinch-off voltage (typically -5 V), turn on VDS to nominal supply (50 V), increase VGS until IDS current is attained, then apply RF input power.

Does the device guarantee performance outside the 3400–3600 MHz band?

No. Performance is guaranteed only within the 3400 to 3600 MHz band. There is no guarantee when used in applications designed outside these frequencies.

What is the maximum forward gate current rating?

The maximum forward gate current is 19 mA at a case temperature of 25°C.