A2T14H450-23NR6

RF FETs, MOSFETs Overview

The A2T14H450-23NR6 is a 93 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates within the 1427 to 1517 MHz frequency range with a drain-source voltage of 31 Vdc. The device features an N-channel enhancement-mode lateral MOSFET structure housed in an OM-1230-4L2S plastic package. Key electrical characteristics include a typical power gain of 18.8 dB and a drain efficiency of 48.2% at 1452 MHz under single-carrier W-CDMA conditions.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance in-package Doherty configuration
• Greater negative gate-source voltage range for improved Class C operation
• Designed for digital predistortion error correction systems

RF FETs, MOSFETs Applications

• Cellular base station applications
• Single-carrier W-CDMA signal processing
• Digital predistortion error correction systems

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R6 corresponds to the required tape and reel packaging details, specifically 150 units on a 56 mm tape width and 13-inch reel. Confirm that the component matches the OM-1230-4L2S plastic package designation. Ensure compatibility with the specified thermal resistance and operating temperature ranges during procurement planning.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring integrated Doherty amplifier functionality within the 1427 to 1517 MHz band. Consider the 31 Vdc operating voltage and the requirement for appropriate biasing networks to utilize the extended negative gate-source voltage range. Evaluate thermal management capabilities against the junction-to-case thermal resistance specifications for the intended application environment.

RF FETs, MOSFETs Part Context

This part belongs to NXP's Airfast RF Power LDMOS Transistor series, which are lateral MOSFETs optimized for high-power radio frequency applications. The A2T14H450-23N variant specifically targets asymmetric Doherty architectures, providing internal matching for both input and output sides to simplify circuit design and improve performance consistency across the operational bandwidth.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

RF FETs, MOSFETs FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature range extends up to +225 °C.

How is the exposed backside of the package connected?

The exposed backside of the package serves as the source terminal for the transistor.

Can the device operate with VDD current supplied through pins 3 and 6?

No, the device cannot operate with VDD current supplied through pin 3 and pin 6.