A2T18S260W12NR3

RF FETs, MOSFETs Overview

The A2T18S260W12NR3 is an N-Channel enhancement-mode lateral MOSFET RF power LDMOS transistor designed for cellular base station applications requiring wide instantaneous bandwidth. It operates within the 1805 to 1880 MHz frequency range and delivers 56 W average output power at a 28 Vdc drain supply voltage. The device features internal input and output matching, optimized for Doherty amplifier configurations. It supports Class C operation with an extended negative gate-source voltage range and withstands high output VSWR conditions.

RF FETs, MOSFETs Feature Summary

• Designed for wide instantaneous bandwidth applications
• Optimized for Doherty amplifier architectures
• Capable of withstanding extremely high output VSWR and broadband operating conditions
• Features an extended negative gate-source voltage range for improved Class C operation

RF FETs, MOSFETs Applications

• Cellular base station amplifiers
• Wideband RF power amplification
• Doherty power amplifier designs

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R3 indicates tape and reel packaging containing 250 units on a 56 mm tape width and 13-inch reel. Confirm the OM-880X-2L2L plastic package designation matches the required form factor. Ensure compatibility with the documented thermal resistance and maximum junction temperature ratings during system integration.

RF FETs, MOSFETs Selection Notes

Select this component for systems requiring 56 W average power in the 1805–1880 MHz band. The device requires a 28 Vdc supply and 1500 mA quiescent current for typical performance. Designers must account for the specified thermal resistance of 0.23 °C/W and ensure adequate heat sinking to maintain junction temperatures within the +225 °C limit under continuous wave or pulsed conditions.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS Transistor family from Freescale Semiconductor (now NXP). It utilizes silicon technology and is housed in an over-molded plastic package. The device integrates internal matching networks to simplify circuit design, reducing the external bill of materials compared to unmatched counterparts in the same product line.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

RF FETs, MOSFETs FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature range is -40 to +225 °C.

How is the source terminal connected in the OM-880X-2L2L package?

The exposed backside of the package serves as the source terminal for the transistor.

Is the device internally matched?

Yes, the part number includes internal matching on both the input and output ports.