A2T18S262W12NR3

RF FETs, MOSFETs Overview

The A2T18S262W12NR3 is an N-Channel Enhancement-Mode Lateral MOSFET RF power LDMOS transistor designed for cellular base station applications requiring wide instantaneous bandwidth. It operates within the frequency range of 1805 to 1880 MHz and delivers a typical average output power of 56 W at a drain voltage of 28 V. The device features a plastic OM-880X-2L2L package with internally matched input and output ports, facilitating integration into high-power amplifier architectures.

RF FETs, MOSFETs Feature Summary

• Designed for wide instantaneous bandwidth applications covering 1805 to 1880 MHz
• Optimized specifically for Doherty amplifier configurations
• Capable of withstanding extremely high output VSWR and broadband operating conditions
• Features an extended negative gate-source voltage range to improve Class C operation

RF FETs, MOSFETs Applications

• Cellular base station power amplifiers
• Wideband RF signal generation systems
• Doherty amplifier stage implementation

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R3 confirms the tape and reel packaging configuration containing 250 units on a 56 mm tape width and 13-inch reel. Confirm the OM-880X-2L2L plastic package designation matches the required mechanical footprint. Ensure the component revision aligns with the April 2017 datasheet release for accurate electrical parameter validation.

RF FETs, MOSFETs Selection Notes

Select this component when designing amplifiers for the 1800 MHz band that require high linearity and efficiency under wide bandwidth conditions. The internal matching simplifies circuit design by eliminating external input and output matching networks. Evaluate thermal management requirements carefully, as the junction-to-case thermal resistance is specified at 0.23 °C/W under continuous wave conditions.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast series of RF power LDMOS transistors from NXP Semiconductors. The series targets high-performance wireless infrastructure markets. The device utilizes silicon technology and is housed in a surface-mount plastic package designed for robust performance in demanding RF environments.

RF FETs, MOSFETs Replacement Considerations

Consult official NXP documentation for qualified substitute part numbers. Verify compatibility regarding pinout, package dimensions, and electrical specifications before substitution.

RF FETs, MOSFETs FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature range extends up to +225 °C.

Does the device require external matching networks?

No, the device is internally matched on both the input and output ports.

What is the recommended drain voltage for operation?

The device is designed for operation at a drain voltage (VDD) of 28 Vdc.