A2T21S160-12SR3

RF FETs, MOSFETs Overview

The A2T21S160-12SR3 is an N-channel enhancement-mode lateral MOSFET RF power LDMOS transistor designed for cellular base station applications. It operates within the 2110 to 2170 MHz frequency range and delivers 38 W average output power at a 28 Vdc drain supply voltage. The device features internal input and output matching, optimized for Doherty configurations and digital predistortion error correction systems. It supports Class C operation with an extended negative gate-source voltage range.

RF FETs, MOSFETs Feature Summary

• Optimized for Doherty amplifier applications
• Designed for integration with digital predistortion error correction systems
• Features an extended negative gate-source voltage range to improve Class C operation efficiency

RF FETs, MOSFETs Applications

• Cellular base station amplifiers
• Doherty power amplifier architectures
• Digital predistortion linearization systems

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm package integrity upon receipt as the device utilizes surface-mount packaging sensitive to electrostatic discharge. Ensure compliance with RoHS standards and validate thermal management requirements against datasheet specifications before final assembly.

RF FETs, MOSFETs Selection Notes

Select this component for wideband cellular infrastructure requiring high linearity and efficiency. Evaluate thermal resistance characteristics and load-pull impedance data for optimal performance tuning. Consider the specific operating voltage and quiescent current requirements when designing the bias network for the target application.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS Transistor family from NXP Semiconductors (formerly Freescale). It represents a specialized silicon-based radio frequency power device engineered for high-performance telecommunications infrastructure, specifically targeting modern digital modulation schemes in base station environments.

RF FETs, MOSFETs Replacement Considerations

Consult official documentation for direct cross-reference substitutes. Verify pinout compatibility and electrical parameter alignment if considering alternative manufacturers or updated series revisions.