AFGH4L40T120RWD

Single IGBTs Overview

The AFGH4L40T120RWD is a single N-channel Field Stop VII (FS7) IGBT with an integrated anti-parallel diode, housed in a Power TO247-4L package. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 40 A at 100°C. The device exhibits a typical saturation voltage of 1.45 V at 25°C and supports a maximum junction temperature of 175°C. Key electrical parameters include a gate-emitter threshold voltage of 5.88 V typ, total gate charge of 171 nC, and short-circuit withstand time of 6 µs.

Single IGBTs Feature Summary

• Utilizes Gen7 Field Stop technology for optimized on-state voltage and switching performance.
• Includes a dedicated Kelvin emitter pin to minimize noise coupling during high-speed switching.
• Rated for short-circuit operation up to 6 µs under specified conditions.
• Complies with automotive reliability standards including AEC-Q101 qualification.

Single IGBTs Applications

• Automotive electric compressors
• Automotive EV PTC heaters
• On-board chargers

Single IGBTs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure that thermal management designs account for the maximum junction temperature limits defined in the datasheet. Confirm that the application environment meets the requirements for AEC-Q101 qualified components if automotive certification is required.

Single IGBTs Selection Notes

Select this component for applications requiring low conduction losses and robust short-circuit capability. The four-lead package design facilitates improved switching performance by separating the power emitter from the signal ground. Evaluate thermal resistance values to ensure adequate heat dissipation for the intended duty cycle and ambient conditions.

Single IGBTs Part Context

This device belongs to onsemi's FS7 generation of discrete IGBTs, designed specifically for high-efficiency power conversion. It integrates advanced trench gate technology with a field stop structure to reduce switching losses compared to previous generations. The inclusion of an integrated fast recovery diode simplifies circuit design for hard and soft switching topologies.

Single IGBTs Replacement Considerations

Direct replacements must match the 1200V/40A rating and TO-247-4L footprint. Verify compatibility of gate charge and saturation voltage characteristics to maintain existing drive circuit performance. Check for equivalent short-circuit ratings and thermal impedance specifications before substitution.

Single IGBTs FAQ

What is the purpose of the fourth lead in the TO-247-4L package?

The fourth lead serves as a Kelvin emitter, providing a separate low-current path for the gate drive return. This isolates the sensitive gate control circuit from high-current switching noise generated by the main power emitter.

How does the device perform under short-circuit conditions?

The AFGH4L40T120RWD is rated for a short-circuit withstand time of 6 µs when operated with a gate voltage of 15 V, a collector voltage of 800 V, and a case temperature of 150°C.

Is this component suitable for high-temperature automotive environments?

Yes, the device is AEC-Q101 qualified and supports a maximum operating junction temperature of 175°C, making it suitable for demanding automotive applications such as e-compressors and PTC heaters.