AFGHL50T65RQDN

Single IGBTs Overview

The AFGHL50T65RQDN is a 650 V, 50 A field stop 4th generation IGBT designed for automotive applications. It features a maximum junction temperature of 175 °C and a typical saturation voltage of 1.6 V at 50 A. The device offers short-circuit withstand capability of 5 µs and is AEC-Q101 qualified. Packaged in a TO-247-3L (CASE 340CX) housing, it supports continuous collector currents up to 78 A at 25 °C case temperature. Key electrical parameters include a gate-emitter threshold voltage range of 3.2 V to 6.0 V and total switching losses of 3.92 mJ at 50 A.

Single IGBTs Feature Summary

• Utilizes novel field stop technology for optimized performance with low conduction and switching losses.
• Positive temperature coefficient enables easy parallel operation for high current applications.
• Short circuit rated with 100% testing for inductive load surge current (ILM).
• AEC-Q101 qualified for automotive reliability standards.

Single IGBTs Applications

• E-compressor for HEV/EV
• PTC Heater for HEV/EV

Single IGBTs Procurement Notes

Verify the specific ordering suffix RQDN against official onsemi documentation to confirm package type and compliance status. Ensure that the TO-247-3L mechanical dimensions match the target PCB layout requirements. Confirm thermal resistance values align with the system's heat dissipation design constraints before finalizing procurement specifications.

Single IGBTs Selection Notes

Select this component for high-efficiency automotive power conversion requiring robust short-circuit tolerance. The 175 °C junction temperature rating allows for higher operating temperatures compared to standard industrial devices. Consider the 1.6 V typical saturation voltage for minimizing conduction losses in high-current paths within electric vehicle subsystems.

Single IGBTs Part Context

This device belongs to onsemi’s field stop 4th generation IGBT series, specifically engineered for automotive markets. It represents an evolution in silicon power transistor technology, focusing on reducing switching energy while maintaining high current handling capabilities suitable for demanding electric vehicle environments.

Single IGBTs Replacement Considerations

Direct replacement requires matching the 650 V rating, TO-247-3L package, and equivalent VCE(sat) characteristics. Verify that any substitute also holds AEC-Q101 qualification if automotive deployment is required. Check pinout compatibility and thermal resistance specifications to ensure seamless integration into existing designs.

Single IGBTs FAQ

What is the short-circuit withstand time for the AFGHL50T65RQDN?

The device has a short-circuit withstand time of 5 µs when VGE = 15 V, VCC = 400 V, and TJ ≤ 150°C.

Is the AFGHL50T65RQDN RoHS compliant?

Yes, the datasheet explicitly states that the device is Pb-Free and RoHS compliant.

What is the maximum pulsed collector current (ILM)?

The maximum pulsed collector current (ILM) is 150 A, tested under conditions of VCC = 600 V, VGE = 15 V, IC = 200 A, RG = 9 Ω, and an inductive load.