AFM907NT1

RF FETs, MOSFETs Overview

The AFM907NT1 is a high ruggedness N-Channel Enhancement-Mode Lateral MOSFET designed for handheld two-way radio applications operating from 136 to 941 MHz. It delivers 8 W output power at 7.5 Vdc with a gain of approximately 15 dB across the 350–520 MHz band. The device features unmatched input and output ports, integrated ESD protection, and stability enhancements. It supports both single-ended and push-pull configurations.

RF FETs, MOSFETs Feature Summary

• Characterized for wideband operation from 136 to 941 MHz
• Unmatched input and output ports allowing broad frequency utilization
• Integrated electrostatic discharge (ESD) protection
• High linearity suitable for TETRA and SSB modulation schemes

RF FETs, MOSFETs Applications

• Output stage for VHF band handheld radios
• Output stage for UHF band handheld radios
• Output stage for 700–800 MHz handheld radios

RF FETs, MOSFETs Procurement Notes

Verify the ordering suffix 'T1' corresponds to the specified tape and reel configuration containing 1,000 units on a 16 mm tape width with a 7-inch reel. Confirm that the component meets the required moisture sensitivity level rating and package specifications before finalizing procurement orders.

RF FETs, MOSFETs Selection Notes

Select this transistor for large-signal common-source amplifier applications requiring high ruggedness and wideband performance. Ensure the design accommodates the DFN 4x6 package dimensions and utilizes the exposed backside source terminal for thermal management. Validate impedance matching networks against the provided broadband and narrowband reference circuit data.

RF FETs, MOSFETs Part Context

This component belongs to the Airfast RF Power LDMOS Transistor family manufactured by NXP Semiconductors. It is specifically engineered for portable communication equipment where size, weight, and power efficiency are critical constraints. The device integrates advanced lateral DMOS technology to provide robust performance in demanding RF environments.

RF FETs, MOSFETs Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-referencing requires matching electrical characteristics, package type, and thermal properties to ensure functional compatibility without redesigning the host circuit board.

RF FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) rating is -0.5 to +30 Vdc.

How does the device perform under load mismatch conditions?

At 520 MHz, the device shows no degradation when subjected to a continuous wave signal with greater than 65:1 VSWR at all phase angles and 3 dB overdrive.

What is the typical drain efficiency at 520 MHz?

In a narrowband test fixture at 520 MHz with 7.5 Vdc supply, the typical drain efficiency is 73.9%.